Design Guidelines

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Thin Film Guidelines

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Thin Film Design Guidelines

  Standard Special NPD

Dimensions of single circuit device on a substrate

     

Singulation (Dicing) tolerance

±0.05 mm

± 0.025 mm

 

Minimum ratio via diameter to
substrate thickness

1 to 1

range from 1
to .5 to 1

N/a

Tolerance via dimension

± 0.05 mm

± 0.025 mm

N/a

Distance via edge to substrate edge
or cut-out

≥ Substrate Thickness

 

N/a

Distance via edge to another via edge

≥ Substrate Thickness

≥ 0.8 x
Substrate Thickness

N/a

Tolerance via center to center

± 0.05 mm

± 0.025 mm

N/a

Metallization annual ring around a via
on front and backside

≥ 0.100 mm

≥ 0.070 mm

x(0-0.05 mm)

Distance conductor to substrate edge:

     

Distance conductor parallel to substrate edge or cut-out edge

≥ 0.200 mm

≥ 0.150 mm

N/a

Conductor Line and Space:*

     

Conductor width Line and Space

0.050 mm

0.030 mm

0.020 mm

Tolerance conductor width

± 0.005 mm/ 0.007 mm

± 0.003 mm/ 0.005 mm

N/a

Resistors

10%

trimmed
to value

N/a

Alignment tolerance conductor
to laser feature

± 0.050 mm

± 0.025 mm

N/a

Alignment tolerance front to
back patterning

± 0.050 mm

± 0.025 mm

N/a

Alignment tolerance resistors
to conductor

± 0.020 mm

± 0.010 mm

N/a

Cut-outs (parallel to substrate edge)

   

N/a

Distance cut-out edge to substrate edge or another cut-out edge

≥ Substrate Thickness

< Substrate thickness

N/a

Alignment tolerance cut-out edge
to substrate edge cut or sawn

± 0.050 mm

± 0.025 mm

N/a

 

Material Properties:

Ceramic Material

Units

Aluminum

oxide ceramic 99.6%
(Al2O3)

Aluminum 
oxide ceramic 99.6%
(Al2O3)

Aluminum
nitride ceramic
(AlN)

Sapphire

Quartz glass
SiO2*

Composition

 

as fired

polished

as fired

polished

polished

Available thicknesses

Inches

0.005-0.025

0.004-0.040

0.004-0.100

0.005-0.050

0.004-0.080

Chamber

inch/
inch

0.002

0.0003/
0.0005

0.0003/
0.0005

0.0003/
0.0005

0.0003/
0.0005

Surface finish typical Ra

µ-inch

2.0-3.0

<1.0

<2.0

<1.0 µ-inch CLA

60/40

Density

g/cm3

3.87

3.87

3.28

3.97

2.2

Dielectric Constant εr

@10 MHz

9.9

9.9

8.9

10

3.8

Loss Tangent

@1 MHz

0.0001

0.0001

0.001

0.0008

0.000015

Thermal Conductivity

W/m°K

26.9

26.9

170

N/a

N/a

Coefficient of Thermal Expansion CTE

 ppm / °C

7.0-8.3

(25-1000°C)

7.0-8.3

(25-1000°C)

4.6

(25-300°C)

A plane at 

25 °C 5.3

0.55

(20-320°C)